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absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 27 78 490 20 30 21 120 50 -55 to + 150 3.6 0.029 59 features benefits low thermal resistance to pcb (< 1.7c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 2.95 (@v gs = 4.5v) 4.30 q g typ 30.0 nc i d (@t c(bottom) = 25c) 50 a m ? note form quantity irfh8316trpbf pqfn 5mm x 6mm tape and reel 4000 irfh8316tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack
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%("#" d s g thermal resistance parameter typ. max. units r ? jc (bottom) junction-to-case ??? 1.7 r ? jc (top) junction-to-case ??? 32 c/w r ? ja junction-to-ambient ??? 35 r ? ja (<10s) junction-to-ambient ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ?? v dss / ? t j breakdown voltage temp. coefficient ??? 21 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.40 2.95 ??? 3.40 4.30 v gs(th) gate threshold voltage 1.2 1.7 2.2 v ? v gs(th) gate threshold voltage coefficient ??? -6.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 1 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 69 ??? ??? s q g total gate charge ??? 59 ??? nc q g total gate charge ??? 30.0 45.0 q gs1 pre-vth gate-to-source charge ??? 7.0 ??? q gs2 post-vth gate-to-source charge ??? 2.7 ??? q gd gate-to-drain charge ??? 9.7 ??? q godr gate charge overdrive ??? 10.6 ??? q sw switch charge (q gs2 + q gd ) ??? 12.4 ??? q oss output charge ??? 18 ??? nc r g gate resistance ??? 1.1 1.7 ? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 18 27 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v ??? v gs = 20v v gs = -20v ??? ??? 490 ??? ??? 50 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a conditions max. 160 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 15v di/dt = 380a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? r g =1.8 ? v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = v gs , i d = 50 a a v gs = 4.5v, i d = 16a v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c m ? v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a

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0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v 2.5v bottom 2.3v ? 60 s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.8v 2.5v bottom 2.3v ? 60 s pulse width tj = 150c 2.3v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050607080 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a

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0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) 100 sec 1msec 10msec dc limited by source bonding technology

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???? ????? + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.6a 8.6a bottom 20a 0 5 10 15 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c

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"#$ reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571

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